An Insulator-Lined Silicon Substrate-Via Technology With High Aspect Ratio
نویسندگان
چکیده
We have developed a novel high-aspect ratio substratevia technology in silicon that features a SiN insulator liner. In this technology, the via is completely filled with electroplated Cu. We have demonstrated vias with an aspect ratio of 30 and we have verified the integrity of the liner in vias with an aspect ratio of 8. The impedance of individual vias was measured in the microwave regime using a high-frequency test structure. The measured inductance of vias with aspect ratios between 3 and 30 approach the theoretically expected values.
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